Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity
نویسندگان
چکیده
منابع مشابه
The Effect of Annealing on Structural, Optical and Electrical Properties of Nanostructured Tin Doped Indium Oxide Thin Films
A low level tin doped indium oxide, ITO, (ca. 10 w % SnO2) thin films were prepared on glass substrate by electron beam technique. Deposited films with deposition rate of 0.1–0.25 nm s were annealed at different temperatures from 250 to 550 °C in air. The thin films were characterized using low and high angle X-ray diffraction and UV-visible spectroscopy. The lattice constant and the grain size...
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ژورنال
عنوان ژورنال: Science and Technology of Advanced Materials
سال: 2011
ISSN: 1468-6996,1878-5514
DOI: 10.1088/1468-6996/12/2/025005